Currently under development.
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BOSC uses the latest in Gallium Nitride (GaN) technology to achieve high performance in a small package.
The low on resistance and low capacitance of the GaN FET enables high efficiency and lowers loop impedance for low Transient Intermodulation Distortion (T-IMD). The fast switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).